Fabrications and Characterizations of ZnO/Zn1-xMgxO Nanorod Quantum Structures

Abstract

Semiconductor nanorod heterostructures open up significant opportunities for fabrication of electronic and photonic nanodevices on single nanorods. The semiconductor nanorod quantum structures with well-defined interfaces are main components for nanoscale resonant tunneling devices, field effect transistors, and light-emitting devices since the nanorod quantum structures (QSs) enable novel physical properties such as quantum confinement and formation of minibands. In particular, spectral wavelength can be tuned by varying the well thickness, and the light emission efficiency is significantly enhanced at room temperature. However, quantum confinement effects in nanowires/nanorod heterostructures have not been easily observed despite recent synthesis of compositionally modulated nanowire superlattices by the vapor liquid solid (VLS) growth process. This may result from the relatively broad heterostructure interfaces caused by realloying of alternating reactants in the metal catalyst during the condensation-precipitation process. In that case, abrupt interfaces can be obtained using our catalyst-free nanorod heteroepitaxial growth technique. This nanorod growth method makes it possible to control the thickness of each layer within the monolayer level by utilizing direct adsorption of atoms on the surface of nanorods. We demonstrated this by the fabrication of ZnO/MgZnO nanorod QSs which exhibit the clear signature of quantum confinement, an increasing blue shift with decreasing layer thickness. In this research, we investigated luminescent characteristics of a single nanorod QS including ZnO/MgZnO coaxial nanorod single-quantum-wells and ZnO/MgZnO nanorod double-quantum-wells using photoluminescence and cathodoluminescence spectroscopy. In addition, we demonstrated nanophotonic switch based on the coupling behavior between optical near-field and ZnO/MgZnO nanorod double-quantum-wells.

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Document Details

Document Type
Technical Report
Publication Date
May 15, 2007
Accession Number
ADA474747

Entities

People

  • Gyu-chul Yi

Organizations

  • Pohang University of Science and Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Chemical Vapor Deposition
  • Energy Transfer
  • Fabrication
  • Field Effect Transistors
  • Ground State
  • Heterojunctions
  • High Electron Mobility Transistors
  • Materials
  • Materials Science
  • Near Field
  • Optical Properties
  • Physical Properties
  • Quantum Wells
  • Semiconductors
  • Spectra
  • Transistors

Fields of Study

  • Materials science

Readers

  • Aerospace Propulsion Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing