High-Density Power Supplies Using Silicon Carbide (SiC) Delivery Order 0001

Abstract

This program was designed to improve the reliability and performance of electrical power systems and components, while reducing operational life cycle costs for a wide variety of aircraft and space electrical power-system generation, conditioning, and utilization equipment applications. To achieve these objectives, research efforts were conducted for the advancement of silicon carbide (SiC) power device technology in the technical areas of advanced design, manufacturability, and component reliability. This delivery order was successful in developing of a normally off enhancement mode vertical junction field effect transistor (VJFET) switch that is capable of blocking 600V-1200V with a zero voltage gate bias. These devices were shown to operate and maintain blocking voltage up to 200 C, and could be used as a high temperature and harsh-environment capable transistor technology. Reliability of the VJFET device was also investigated showing excellent stability after initial infant mortality issues were screened.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2008
Accession Number
ADA480687

Entities

People

  • David C. Sheridan

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Bipolar Junction Transistors
  • Compound Semiconductors
  • Electronics Industry
  • Electronics Laboratories
  • Failure Mode And Effect Analysis
  • Field Effect Transistors
  • High Density
  • High Temperature
  • Manufacturing
  • Metal-Semiconductor Junctions
  • Power Supplies
  • Reliability
  • Semiconductors
  • Silicon Carbide
  • Transistors

Fields of Study

  • Engineering

Readers

  • Electrical Engineering

Technology Areas

  • Space
  • Space - Hall-Effect Thruster