Arsenic Cross-Contamination in GaSb/InAs Superlattices

Abstract

We have investigated the cross-contamination of As in GaSb/InAs superlattices. We demonstrate a method of varying the lattice constant of the superlattice. By controlling the As background pressure in the growth chamber, the strain can be controlled to about 0:01%, corresponding to As cross-incorporation variations of about +/-1%. The distribution of As is investigated by X-ray diffraction and cross-sectional scanning tunneling microscopy, and the critical thickness is obtained.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 2004
Accession Number
ADA481264

Entities

People

  • Brian R. Bennett
  • E. H. Aifer
  • Eric M. Jackson
  • G. I. Boishin
  • Lloyd J. Whitman

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Contamination
  • Crystal Growth
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Detectors
  • Diffraction
  • Measurement
  • Microscopy
  • Military Research
  • Quantum Tunneling
  • Scanning
  • Superlattices
  • Thickness
  • Tunneling
  • X Rays
  • X-Ray Diffraction

Readers

  • Thin Film Deposition Science.