Graphite and BN/AlN Annealing Caps for Ion Implanted SiC
Abstract
The activation of dopants for wide band-gap semiconductors such as SiC is a subject of much research. Silicon Carbide is problematic as Si sublimates from the SiC matrix at the temperatures required for activation. We have investigated the success of capping SiC substrates with more thermally stabile materials to impede Si sublimation. We present data taken from the SiC capping strategies using carbon and AlN/BN surface caps. We found that the C cap protects the surface at all analyzed annealing temperatures. While the nitride cap protects the surface at all temperatures, however, it was very difficult to remove. There were modest increases in the sheet resistance for the C capped material when compared to the nitride capped material with the exception of the graphite capped 1800 degree sample.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 2006
- Accession Number
- ADA481775
Entities
People
- A. Bolonikov
- D. Vispute
- K. A. Jones
- K. W. Kirchner
- M. A. Derenge
- M. C. Wood
- S. S. Hullavarad
- Shilpa S. Dhar
- T. S. Sudarshan
- T. S. Zheleva
Organizations
- United States Army Research Laboratory