Proton Irradiation of InAs/AlSb/GaSb Resonant Interband Tunneling Diodes

Abstract

Room temperature current voltage measurements have been made on InAs/AlSb/GaSb resonant interband tunnel diodes (RITDs) irradiated with 2 MeV protons to determine the effect of displacement damage on the negative resistance peak current I(sub p) and the peak-to-valley current ratio P/V. Diodes with 5 and 13 ML AlSb barrier thickness were irradiated and measured several times until the total fluences reached 1 x 10(exp 15) and 2 x 10(exp 14) H(+)/sq cm, respectively. The current due to radiation-induced defects has a nonlinear voltage dependence with a large increase occurring in the voltage range between the negative resistance peak and the valley. I(sub p) increased less than 50%, while a large increase in the valley current decreased the P/V ratios to about 2.

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Document Details

Document Type
Technical Report
Publication Date
Apr 23, 2001
Accession Number
ADA482493

Entities

People

  • Allan S. Bracker
  • B. D. Weaver
  • Brian R. Bennett
  • Richard Magno

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Space

DTIC Thesaurus Topics

  • Conduction Bands
  • Current Density
  • Diodes
  • Displacement
  • Electron Diffraction
  • Energy Bands
  • Energy Conservation
  • Energy Consumption
  • Measurement
  • Metal-Semiconductor Junctions
  • Military Research
  • Quantum Tunneling
  • Quantum Wells
  • Radiation
  • Resonant Tunneling Diodes
  • Tunnel Diodes
  • Tunneling

Fields of Study

  • Physics

Readers

  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology