The Structure of Sb-Terminated GaAs(001) Surfaces

Abstract

We have studied the structure of Sb-terminated GaAs(001) surfaces using reflection high energy electron diffraction, X-ray photoelectron spectroscopy, and scanning tunneling microscopy (STM). Clean, As-terminated (2*4) surfaces were prepared by molecular beam epitaxy and then exposed to Sb4 at 490 C, producing a (2*8)-reconstructed surface terminated with ~1 ML of Sb. Re-heating such a surface to 460 C in vacuum returns the surface to a (2*4) reconstruction with approximately 0.5 ML Sb remaining. STM reveals a complex, but well-ordered structure on the (2*8) surface for which a tentative model is proposed. On the (2*4) surface, our results clearly show that each unit cell is terminated by three dimers, with two-thirds Sb dimers and one-third As dimers. These results contrast with previous proposals that the Sb-induced (2*4) surface is terminated solely by one or two Sb dimers.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1999
Accession Number
ADA482515

Entities

People

  • Benjamin V. Shanabrook
  • Berend T Jonker
  • Brian R. Bennett
  • E. M. Kneedler
  • Lloyd J. Whitman

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Air Platforms
  • Space

DTIC Thesaurus Topics

  • Contrast
  • Crystal Growth
  • Crystal Lattices
  • Diffraction
  • Electron Diffraction
  • Electrons
  • Energy
  • Epitaxial Growth
  • Gray Scale
  • High Resolution
  • Molecular Beam Epitaxy
  • Photoelectrons
  • Quantum Tunneling
  • Scanning
  • Spectroscopy
  • Tunneling
  • X Rays

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene