A Stable High-Index Surface of Silicon: Si(5 5 12)

Abstract

A stable high-index surface of silicon, Si(5 5 12), is described. This surface forms a 2 x 1 reconstruction with one of the largest unit cells ever observed, 7.7 angstroms by 53.5 angstroms. Scanning tunneling microscopy (STM) reveals that the 68 surface atoms per 2 x 1 unit cell are reconstructed only on a local scale. A complete structural model for the surface is proposed, incorporating a variety of features known to exist on other stable silicon surfaces. Simulated STM images based on this model have been computed by first-principles electronic-structure methods and show excellent agreement with experiment.

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Document Details

Document Type
Technical Report
Publication Date
Sep 15, 1995
Accession Number
ADA482925

Entities

People

  • A. A. Baski
  • Lloyd J. Whitman
  • S. C. Erwin

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Agreements
  • Availability
  • Buildings And Structures
  • Classification
  • Contracts
  • Electronic Structure Methods
  • Information Operations
  • Instructions
  • Microscopy
  • Military Research
  • Monitoring
  • Quantum Tunneling
  • Scanning
  • Security
  • Standards

Fields of Study

  • Physics

Readers

  • Quantum Chemistry
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene