Development of III-Nitride Materials for IR Applications

Abstract

This project will cover three areas: (1) development of InN, (2) growth and properties of GaN/AlN nanostructures for intersubband transitions, and (3) GaN Quantum Dots for intersubband transitions. This project will develop nitride materials for use in the near and mid-infrared portions of the electromagnetic spectrum. USAF needs IR materials for infrared countermeasures, sensor protection, and sensor sources and detectors. The nitrides have the advantages of being rad-hard. They also have large band offsets that make intersubband transition in the IR possible.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 16, 2008
Accession Number
ADA483946

Entities

People

  • James S. Speck

Organizations

  • University of California, Santa Barbara

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Availability
  • Classification
  • Contracts
  • Department Of Defense
  • Instructions
  • Law
  • Monitoring
  • Security
  • Translations

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology
  • Sensor Fusion and Tracking Systems.

Technology Areas

  • Microelectronics
  • Quantum Computing