Longwave Plasmonics on Doped Silicon and Silicides

Abstract

The realization of plasmo-electronic integrated circuits in a silicon chip will be enabled by two new plasmonic materials that are proposed and modeled in this article. The first is ion-implanted Si (n-type or p-type) at the surface of an intrinsic Si chip. The second is a thin-layer silicide such as Pd2Si, NiSi, PtSi2 WSi2 or CoSi2 formed at the Si chip surface. For doping concentrations of 1020 cm-3 and 1021 cm-3, our dispersion calculations show that bound surface plasmon polaritons will propagate with low loss on stripe-shaped plasmonic waveguides over the 10 to 55 um and 2.8 to 15 um wavelength ranges, respectively. For Pd2Si/Si plasmonic waveguides, the wavelength range of 0.5 to 7.5 um is useful and here the propagation lengths are 1 to 2300 um. For both doped and silicided guides, does into the conductive stripe material.

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Document Details

Document Type
Technical Report
Publication Date
Apr 28, 2008
Accession Number
ADA484561

Entities

People

  • Richard Soref
  • Robert E. Peale
  • Walter Buchwald

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force Research Laboratories
  • Circuits
  • Dispersions
  • Electrons
  • Frequency
  • Integrated Circuits
  • Materials
  • Materials Laboratories
  • Materials Processing
  • Optical Properties
  • Optics
  • Plasmonic Materials
  • Plasmons
  • Polaritons
  • Semiconductors
  • Surface Plasmon Polaritons
  • Surface Plasmons

Fields of Study

  • Materials science

Readers

  • Microwave Engineering.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics