Ultrahigh-Temperature Microwave Annealing of Al+- and P+-Implanted 4H-SiC
Abstract
In this work, an ultrafast solid-state microwave annealing has been performed, in the temperature range of 1700 2120 deg C on Al+- and P+-implanted 4H-SiC. The solid-state microwave system used in this study is capable of raising the SiC sample temperatures to extremely high values, at heating rates of ~600 deg C/s. The samples were annealed for 5-60 s in a pure nitrogen ambient. Atomic force microscopy performed on the annealed samples indicated a smooth surface with a rms roughness of 1.4 nm for 5x5 sq micrometer scans even for microwave annealing at 2050 deg C for 30 s. Auger sputter profiling revealed a < 7 nm thick surface layer composed primarily of silicon, oxygen, and nitrogen for the samples annealed in N2, at annealing temperatures up to 2100 deg C. X-ray photoelectron spectroscopy revealed that this surface layer is mainly composed of silicon oxide and silicon nitride.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2007
- Accession Number
- ADA486316
Entities
People
- John A. Schreifels
- Joseph J. Kopanski
- Mark C. Ridgway
- Mulpuri V. Rao
- Siddarth G. Sundaresan
- Yong-lai Tian
Organizations
- George Mason University