Far Infrared Photonic Crystals Operating in the Reststrahl Region

Abstract

We report here far infrared photonic crystals comprised of a lattice-matched pair of semiconductor materials: GaP and Si, or GaAs and Ge, or AlAs and GaAs. The crystals operate in a wavelength range where the real refractive index of one material undergoes a major dispersion associated with the LO and TO phonon absorption peaks. Using electromagnetic theory, we investigated the photonic-bandgap response for both TE and TM polarizations. Propagation losses for two types of crystals are estimated in this paper. These structures offer promise for the integration of III-V materials (GaP, GaAs) on group IV (Si, or Ge) for practical, active, far infrared photonic devices, such as light sources, amplifiers, modulators, reconfigurable waveguides and switches.

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Document Details

Document Type
Technical Report
Publication Date
Aug 20, 2007
Accession Number
ADA487188

Entities

People

  • Richard Soref
  • Weidong Zhou
  • Zexuan Qiang

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Air Force
  • Air Force Research Laboratories
  • Band Gaps
  • Band Structures
  • Crystals
  • Electromagnetism
  • Light Sources
  • Materials
  • Optical Materials
  • Phonons
  • Photoexcitation
  • Photonic Crystals
  • Physical Properties
  • Refractive Index
  • Semiconductors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics