Efficient THZ Source Based on Cascaded Optical Down-Conversion in Orientation-Patterned GaAs Structures

Abstract

The goal of this DARPA TIFT project was to demonstrate an efficient room temperature source for THz imaging systems based on optical down-conversion in an orientation-patterned GaAs microstructure, incorporated into an optical resonant cavity, and pumped by a compact solid state laser. The main achievements are: (1) quasi-phase-matched (QPM) GaAs microstructures with periodic reversal of crystalline orientation, including orientation-patterned GaAs (OPGaAs), diffusion-bonded GaAs (DB-GaAs) and optically-contacted GaAs (OC-GaAs) suitable for THz generation were fabricated with the length exceeding 2 cm and thickness of 1 mm, (2) efficient resonantly enhanced THz wave generation with GaAs inside the cavity of an optical parametric oscillator was achieved in the range 0.7-3.5 THz, with an average THz power of 1 mW at 2.8 THz, and (3) cascaded optical-to-THz frequency conversion was demonstrated, which opens the possibility of exceeding the Manley-Rowe conversion efficiency limit and getting more than one THz photon per optical photon.

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Document Details

Document Type
Technical Report
Publication Date
Nov 20, 2008
Accession Number
ADA500436

Entities

People

  • Anjie Lin
  • Candace Lynch
  • David. Bliss
  • James Harris
  • Joe Schaar
  • Konstantin L. Vodopyanov
  • Martin M. Fejer
  • Paulina Kuo
  • Vladimir Kozlov
  • Walter Hurlbut
  • Xiaojun Yu
  • Yun-shik Lee

Organizations

  • Stanford University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Amplifiers
  • Cavity Resonators
  • Crystal Lattice Vibrations
  • Diffraction
  • Frequency
  • Frequency Conversion
  • Lasers
  • Materials
  • Optical Materials
  • Optical Properties
  • Oscillators
  • Polaritons
  • Refraction
  • Repetition Rate
  • Terahertz Radiation
  • Two Photon Absorption

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy