Electrical and Thermal Analysis of Gallium Nitride HEMTs

Abstract

The purpose of this thesis was to build a transient model and to study the electrical and thermal characteristics of the AlGaN/GaN HEMT. We first used Method 3104 of MIL-STD 750D to determine the location of HEMT structure that gate voltage measurement relates to. Secondly, we investigated the performance of single pulse and multiple pulses. Thirdly, we studied and compared the performance between the DC model and the Transient model (multiple pulses) with the same power. Finally, we compared the self-heating effect between various substrates and discussed the observation of unique transistor heating. Based on the analysis of these simulation results, we would be able to predict the performance of the AlGaN/GaN HEMT.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2009
Accession Number
ADA501542

Entities

People

  • Yuchia Wang

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electron Mobility
  • Electronics
  • Electronics Laboratories
  • Energy Bands
  • Field Effect Transistors
  • Gallium Nitrides
  • Heat Energy
  • High Electron Mobility Transistors
  • Integrated Circuits
  • Measurement
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Simulations
  • Transistors

Fields of Study

  • Engineering

Readers

  • Computational Modeling and Simulation
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics