Observation of Unidirectional Current Rectification and AC-to-DC Power Conversion by As-Grown Single-Walled Carbon Nanotube Transistors
Abstract
Current rectification property of chemical vapor deposited (CVD), as-grown single-walled carbon nanotube (SWNT) is investigated. The long strands of SWNT bundles are used to fabricate multiple arrays of switching devices with the channel length of 3, 5, 7 and 10 micrometers on a 15 mm x 15 mm SiO2 on Si substrate. The majority of the fabricated devices, regardless of their channel length, show current rectification characteristics with high throughput of current (I) in the forward bias (V). Atomic force microscopic (AFM) analysis of the device structure and surface topology of SWNT suggest the observed rectification of current to result from surface irregularities and possibly due to change in the chirality of a single tube. Utilizing the fabricated SWNT FETs for the first time, a nanoscale AC-to-DC power converter is demonstrated.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 2008
- Accession Number
- ADA505851
Entities
People
- Govind Mallick
- Mark H Griep
- Pulickel Ajayan
- Samuel Hirsh
- Sangeeta Sahoo
- Sarah Lastella
- Shashi P. Karna
Organizations
- United States Army Research Laboratory