High Dielectrics on High Carrier Mobility InGaAs Compound Semiconductors and GaN - Growth, Interfacial Structural Studies, and Surface Fermi Level Unpinning

Abstract

This is a project on nano-electronics, which achieved many firsts: full Fermi level unpinning in oxide-In0.2Ga0.8As, determined energy-band parameters at interfaces of high-k; atomic-layer-deposited (ALD) oxides on GaAs and InGaAs, and first to achieve inversion-channel GaN on MOSFET with ALD Al2O3 as gate dielectric.

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Document Details

Document Type
Technical Report
Publication Date
Feb 19, 2010
Accession Number
ADA514454

Entities

People

  • Minghwei Hong

Organizations

  • National Tsing Hua University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Complementary Metal-Oxide Semiconductors
  • Compound Semiconductors
  • Dielectrics
  • Electronics
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Fermi Levels
  • Field Effect Transistors
  • Materials
  • Materials Science
  • Metal Oxide Semiconductors
  • Mobility
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene