Interface Effects in Metal Oxynitride Capacitors (PREPRINT)
Abstract
The evolution of electrical power systems to denser, higher power configurations calls for the continual improvement of robust component technologies. Capacitors are widely recognized as a limiting technology in these systems due to their low energy density, high loss, and limited life. Metal oxynitride thin films are a candidate dielectric material for developing thermally tolerant, compact, low loss capacitor structures due to their high energy density, high insulation resistance, and thermally stable dielectric properties. Pulsed DC reactive sputtering is utilized to deposit submicron thick films of aluminum oxynitride and hafnium oxynitride, which are then evaluated as single layer capacitors using different electrode schemes. Various electrode materials (e.g., aluminum, gold, etc.) and deposition methods appear to influence the electronic properties of the device due to modification of the electrode-dielectric interface. This effect is also demonstrated with controlled variation of the thicknesses for the dielectric, and appears to be apparent with similar modifications to the electrode layers as well. The interfacial capacitance in AlON is shown to go through a transition as the dielectric thickness increases above 2500 angstrom. Increasing the number of internal layers within the dielectric, obtained by sequential deposition of the same material, also appears to influence the electrical properties of the film.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 2010
- Accession Number
- ADA520879
Entities
People
- Jeffery T. Stricker
- Jennifer N. Decerbo
- Kevin R. Bray
- Sarah B. Koop
Organizations
- Universal Energy Systems