4H-SiC Power Bipolar Junction Transistor with a Very Low Specific On-resistance of 2.9 mOmega.cm2
Abstract
This paper reports a newly achieved best result on the specific on-resistance (Rsp,on) of power 4H-SiC bipolar junction transistors (BJT). A 4H-SiC BJT based on a 12 um drift-layer shows a record low specific-on resistance of only 2.9 mOMEGA.sq cm, with an open base collector-to-emitter blocking voltage (Vceo) of 757 V, and a current gain of 18.8. The active area of this 4H-SiC BJT is 0.61 sq mm, and it has a fully inter-digitated design. This high performance 4H-SiC BJT conducts up to 5.24 A at a forward voltage drop of Vce = 2.5 V, corresponding to a low Rsp_on of 2.9 mOMEGA.sq cm up to Jc=859A/sq cm. This is the lowest specific on-resistance ever reported for high power 4H-SiC BJTs.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 12, 2006
- Accession Number
- ADA521923
Entities
People
- Jian H. Zhao
- Jianhui Zhang
- Petre Alexandrov
- Terry Burke