High-Sensitivity Conjugated Polymer/Nanoparticle Nanocomposite for Infrared Sensor Applications III
Abstract
We prepared photovoltaic devices featuring a PEDOT:PSS hole transport layer and three individually deposited PbSe QD layers. The PbSe photovoltaic devices incorporating the PEDOT:PSS layer exhibited enhanced AM1.5 PCEs relative to those of devices lacking the hole transport layer, with an enhancement factor of 60%. The roughness of the interface between the PEDOT:PSS and PbSe QD layers was almost three times less than that of the original ITO-PbSe QD interface, as measured using X-ray reflectivity. Hence, the presence of the PEDOT:PSS layer not only provided a smoother interface between the PbSe QD layers and the ITO substrate but also resulted in enhanced open-circuit voltages. In addition, the presence of the PEDOT:PSS hole transport layer prolonged the life time, as measured in terms of the time required to reach 80% of the normalized efficiency, of the PbSe QD solar device by six-fold, suggesting that this approach improves the performance of PbSe QD photovoltaic devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 25, 2010
- Accession Number
- ADA527246
Entities
People
- Kung-Hwa Wei
Organizations
- National Chiao Tung University