Tin-based IV-IV Heterostructures by Using Molecular Beam Epitaxy

Abstract

This is the report of a project to grow direct-bandgap group IV semiconductors.

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Document Details

Document Type
Technical Report
Publication Date
Sep 22, 2010
Accession Number
ADA530763

Entities

People

  • G. Sun ;r. A. Soref
  • Hung Hsiang Cheng

Organizations

  • National Taiwan University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Sensors

DTIC Thesaurus Topics

  • Air Force Research Laboratories
  • Band Gaps
  • Crystal Lattices
  • Electron Microscopes
  • Electronics
  • Energy Bands
  • Films
  • Heterojunctions
  • High Resolution
  • Low Temperature
  • Materials
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Quantum Wells
  • Semiconductors
  • Subatomic Particles
  • X Rays

Fields of Study

  • Materials science

Technology Areas

  • Microelectronics