Evaluation of an Electronic Load for Pulsed Current Characterization of Power Semiconductors
Abstract
An electronic load was evaluated for outputting a pulse of a controlled value of current from a power supply, for consideration for measuring a device-under-test (DUT). A large Dynaload load containing insulated gate bipolar transistors (IGBTs) was used without a DUT but was rejected due to poor performance. In constant current mode, the load?s pulses of I(t) had undesirable off-state leakage. Its I(t) pulse had slow rise, odd shape, and inadequate reproducibility for calibrated measurements. The load was rated merely 600 V, hence, during a pulse, could include a VDS of less than 600 V.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 2010
- Accession Number
- ADA531601
Entities
People
- Timothy E. Griffith
Organizations
- United States Army Research Laboratory