Dual Mode Thin Film Bulk Acoustic Resonators (FBARs) Based on AlN, ZnO and GaN Films with Tilted c-Axis Orientation

Abstract

Thin film bulk acoustic wave resonators (FBAR) using piezoelectric AlN, ZnO and GaN thin films have attracted extensive research activities in the past years. Highly c-axis oriented (normal-plane orientation) binary semiconductor piezoelectric thin films are particularly investigated for resonators operating at the fundamental thickness longitudinal mode. Depending on the processing conditions, tilted polarization (c-axis off the normal direction to the substrate surface) is often found in the as-deposited piezoelectric thin films, which leads to the coexistence of thickness longitudinal mode and shear mode for the thin film resonators.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2010
Accession Number
ADA532761

Entities

People

  • Qing-ming Wang

Organizations

  • University of Pittsburgh

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors

DTIC Thesaurus Topics

  • Bulk Acoustic Wave Devices
  • Computational Fluid Dynamics
  • Dielectric Permittivity
  • Fluid Flow
  • Materials Laboratories
  • Materials Processing
  • Materials Science
  • Measurement
  • Mechanical Engineering
  • Mechanical Properties
  • Mechanics
  • Modulus Of Elasticity
  • Piezoelectric Crystals
  • Piezoelectric Effect
  • Piezoelectric Materials
  • Quartz Resonators
  • Standing Waves

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Microelectronics - Microelectromechanical Systems