Scaling Projections for Sb-based p-channel FETs

Abstract

Numerical device modeling is used to study p-channel FETs with InSb, GaSb and InGaSb channels. To be as realistic as possible, the basic parameters are chosen to be those measured experimentally in state-of-the- art high-mobility materials, and where possible, predictions are compared against published data. Confinement effects are captured in the simulations using the density-gradient description of quantum transport. The emphasis is on projecting scaling properties and ultimate performance, with key issues being short-channel effects, the importance of source-drain leakage current, power considerations and p+-cap design. Although important, issues related to gate leakage current and gate stack design are not well addressed by modeling, and so are not considered in detail. With III-V complementary circuits and high-speed, low-power applications in mind, the general conclusion is that among the antimonide- based pFETs, InGaSb devices provide the best balance of speed and power dissipation.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2010
Accession Number
ADA536449

Entities

People

  • Brian R. Bennett
  • Mario G. Ancona
  • Ronaldd D. Schrimpf

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Antimonides
  • Aspect Ratio
  • Band Gaps
  • Boundary Value Problems
  • Channel Spacing
  • Electron Mobility
  • Electronics
  • Energy Bands
  • Field Effect Transistors
  • Materials
  • Mobility
  • Quantum Wells
  • Semiconductors
  • Simulations
  • Solid State Electronics
  • Transistors
  • Transport Ships

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Quantum Computing