High kappa Dielectrics on InGaAs and GaN - Growth, Interfacial Structural Studies, and Surface Fermi Level Unpinning

Abstract

This is the report of a project to maintain world-leading expertise of high-k dielectric growth on InGaAs and GaN, including high-k enhancement, surface Fermi level unpinning, oxide scaling to < 1 nm, and high temperature thermal stability.

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Document Details

Document Type
Technical Report
Publication Date
Apr 20, 2011
Accession Number
ADA541513

Entities

People

  • Minghwei Hong

Organizations

  • National Tsing Hua University

Tags

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Complementary Metal-Oxide Semiconductors
  • Compound Semiconductors
  • Dielectrics
  • Electronics
  • Electronics Industry
  • Energy Bands
  • Fermi Levels
  • Field Effect Transistors
  • High Temperature
  • Materials
  • Materials Science
  • Metal Oxide Semiconductors
  • Power Electronics
  • Semiconductors
  • Silicon Carbide
  • Solid State Electronics

Fields of Study

  • Materials science

Readers

  • Research Science/Academic Research
  • Semiconductor Device Technology