High-Electron Mobility Graphene Channel Transistors for Millimeter-Wave Applications

Abstract

SiCN deposited by plasma-enhanced chemical vapor deposition (PECVD) using hexamethyldisilazane (HMDS) vapor is studied. During PECVD, hydrogen is used as a carrier gas in addition to HMDS vapor. This becomes an advantage in the graphene process because hydrogen has cleaning effect on graphene surface. To verify this effect, SiCN gate stack is applied to the graphene FETs on SiC substrates. FETs with SiCN gate stack exhibit clearer ambipolar characteristics than FETs with conventional SiN gate stack.

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Document Details

Document Type
Technical Report
Publication Date
Aug 12, 2011
Accession Number
ADA547659

Entities

People

  • Tetsuya Suemitsu

Organizations

  • Tohoku University

Tags

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Current Density
  • Electrical Properties
  • Electron Mobility
  • Electrons
  • Epitaxial Growth
  • Fabrication
  • Field Effect Transistors
  • Graphene
  • Hydrogen
  • Materials
  • Materials Processing
  • Millimeter Waves
  • Mobility
  • Substrates
  • Transistors
  • Ultrahigh Vacuum

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • 5G
  • Microelectronics
  • Microelectronics - Graphene