Nanobeam Photonic Crystal Cavity Light-Emitting Diodes

Abstract

We present results on electrically driven nanobeam photonic crystal cavities formed out of a lateral p-i-n junction in gallium arsenide. Despite their small conducting dimensions, nanobeams have robust electrical properties with high current densities possible at low drive powers. Much like their two-dimensional counterparts, the nanobeam cavities exhibit bright electroluminescence at room temperature from embedded 1250 nm InAs quantum dots. A small room temperature differential gain is observed in the cavities with minor beam self-heating suggesting that lasing is possible. These results open the door for efficient electrical control of active nanobeam cavities for diverse nanophotonic applications.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2011
Accession Number
ADA549546

Entities

People

  • Bryan Ellis
  • Eugene E. Haller
  • Gary Shambat
  • James Harris
  • Jan Petykiewicz
  • Jelena Vučković
  • Marie A. Mayer
  • Tomas Sarmiento

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Crystals
  • Current Density
  • Detectors
  • Diodes
  • Electron Microscopes
  • Engineering
  • Fabrication
  • Gallium Arsenides
  • Light Emitting Diodes
  • Materials
  • Materials Science
  • Photonic Crystals
  • Q Factor
  • Quantum Dots
  • Refractive Index
  • Semiconductors
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing