Enhancement-Mode Antimonide Quantum-Well MOSFETs With High Electron Mobility and Gigahertz Small-Signal Switching Performance
Abstract
This letter demonstrates, for the first time, enhancement-mode (e-mode) antimonide MOSFETs by integrating a composite high- gate stack (3 nm Al2 O3 1 nm GaSb) with an ultrathin InAs0.7 Sb0.3 quantum well (7.5 nm). The MOSFET exhibits record high electron drift mobility of 5200 cm2 /V s at carrier density (Ns ) of 1.8 1012 cm 2 , subthreshold slope of 150 mV/dec, ION /IOFF ratio of 4000 within a voltage window of 1 V, high ION of 40 A/ m at VDS of 0.5 V for a 5- m gate length (LG ) device. The device exhibits excellent pinchoff in the output characteristics with no evidence of impactionization enabled by enhanced quantization and e-mode operation. RF characterization allows extraction of the intrinsic device metrics (Cgs , Cgd , gm , gds , ve , and ft ) and the parasitic resistive and capacitive elements limiting the short-channel device performance.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 2011
- Accession Number
- ADA553255
Entities
People
- Ashish Agrawal
- Ashkar Ali
- Brian R. Bennett
- Himanshu Madan
- Israel Ramirez
- Jeff Lindemuth
- Rajiv Misra
- Ronaldd D. Schrimpf
- Suman Datta
Organizations
- United States Naval Research Laboratory