Extraordinary magnetoresistance in shunted chemical vapor deposition grown graphene devices

Abstract

We report gate tunable linear magnetoresistances (MRs) of ~600% at 12 T in metal-shunted devices fabricated on chemical vapor deposition (CVD) grown graphene. The effect occurs due to decreasing conduction through the shunt as the magnetic field increases (known as the extraordinary magnetoresistance effect) and yields an MR that is at least an order-of-magnitude higher than in un-shunted graphene devices.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 2011
Accession Number
ADA554780

Entities

People

  • Adam L. Friedman
  • Frank Keith Perkins
  • Jeremy T. Robinson
  • Paul M. Campbell

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Data Acquisition
  • Detection
  • Detectors
  • Films
  • Graphene
  • Low Temperature
  • Magnetic Detectors
  • Magnetic Fields
  • Magnetoresistance
  • Materials
  • Materials Processing
  • Measurement
  • Military Research
  • Mobility
  • Resistance
  • Vapor Deposition

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Superconducting Magnet Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene