Study of Shubnikov-de Haas Oscillations and Measurement of Hole Effective Mass in Compressively Strained InxGa1-xSb Quantum Wells

Abstract

InXGa1-xSb has the highest hole mobility amongst all III-V semiconductors which can be enhanced further with the use of strain. The use of confinement and strain in InXGa1-xSb quantum wells lifts the degeneracy between the light and heavy hole bands which leads to reduction in the hole effective mass in the lowest occupied band and an increase in the mobility. We present magnetotransport measurements on compressively strained InXGa1-xSb and GaSb quantum wells. Hall-bar and Van de Pauw structures were fabricated and Shubnikov de Haas oscillations in the temperature range of T = 2 10 K for magnetic fields of B = 0-9 T were measured. The reduction of effective hole mass with strain was quantified. These results are in excellent agreement with modeling results from band structure calculations of the effective hole mass in the presence of strain and confinement.

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Document Details

Document Type
Technical Report
Publication Date
May 04, 2011
Accession Number
ADA554810

Entities

People

  • Aneesh Nainani
  • Brian R. Bennett
  • Krishna C. Saraswat
  • Mario G. Ancona
  • Ronaldd D. Schrimpf
  • Toshifumi Irisawa

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Agreements
  • Band Structures
  • Charge Carriers
  • Cyclotron Resonance
  • Electronics
  • Energy Bands
  • Field Effect Transistors
  • Frequency
  • Low Temperature
  • Magnetic Fields
  • Measurement
  • Mobility
  • Oscillation
  • Quantum Wells
  • Scattering
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing