An Octave Bandwidth, High PAE, Linear, Class J GaN High Power Amplifier

Abstract

In this paper, the design and measured performance of a wideband (1.2-2.5 GHz), high efficiency, high linearity, Gallium Nitride (GaN), Class J, 200-W power amplifier (PA) is reported. The Class J PA output stages exhibit 45-62% power-added efficiency (PAE) and a near-maximum power match over > 2:1 bandwidth, and impressive 802.11g WLAN linearity. This linear PA has 65 to 70-dB small-signal gain over this bandwidth.

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Document Details

Document Type
Technical Report
Publication Date
Mar 12, 2012
Accession Number
ADA557611

Entities

People

  • Howard Sheehan
  • Kris Skowronski
  • Rajesh Mongia
  • Sid Anderson
  • Steve Nelson

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Amplifiers
  • Bandwidth
  • Compound Semiconductors
  • Data Rate
  • Efficiency
  • Electronic Amplifier
  • Elements
  • Frequency
  • Frequency Bands
  • Gallium
  • Impedance
  • Linearity
  • Power Amplifiers
  • Test And Evaluation
  • United States

Readers

  • Microwave Engineering.
  • Neural Network Machine Learning.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics