Radiation Effects On Emerging Electronic Materials And Devices

Abstract

This report documents work conducted as part of a five-year Multi-disciplinary University Research Initiative (MURI) in the area of Semiconductor Radiation Physics. The objectives of this program are to examine and understand the underlying physical phenomena that control the radiation response of semiconductor technologies incorporating emerging materials and devices. The radiation response and electrical properties of technologies that exhibit exception promise for application in DoD systems are investigated experimentally and through application of advanced theory and simulation. The overall purpose is to develop knowledge and tools that will guide development of future radiation-hardened electronics. This MURI program includes researchers from Vanderbilt University, The University of Florida, Georgia Institute of Technology, North Carolina State University, Rutgers University and Arizona State University and strong collaboration with leading industrial and government labs.

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Document Details

Document Type
Technical Report
Publication Date
Jan 17, 2010
Accession Number
ADA561811

Entities

People

  • Daniel M. Fleetwood
  • Eric Garfunkle
  • Gerald Lucovsky
  • Hugh Barnaby
  • John Cressler
  • Len Feldman
  • Mark E. Law
  • Ronald D. Schrimpf
  • Sokrates T. Pantelides

Organizations

  • Vanderbilt University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Electrical Properties
  • Electronics Industry
  • Electronics Laboratories
  • Energy Bands
  • Field Effect Transistors
  • Materials
  • Materials Processing
  • Materials Science
  • Materials Testing
  • Radiation Effects
  • Semiconductor Devices
  • Semiconductors
  • Space Systems
  • Test Methods
  • Three Dimensional
  • Two Dimensional

Readers

  • Academic Conference Management
  • Acoustical Oceanography.
  • Software Engineering

Technology Areas

  • Microelectronics