Towards Prognostics of Power MOSFETs: Accelerated Aging and Precursors of Failure

Abstract

This paper presents research results dealing with power MOSFETs (metal oxide semiconductor field effect transistor) within the prognostics and health management of electronics. Experimental results are presented for the identification of the on-resistance as a precursor to failure of devices with die-attach degradation as a failure mechanism. Devices are aged under power cycling in order to trigger die-attach damage. In situ measurements of key electrical and thermal parameters are collected throughout the aging process and further used for analysis and computation of the on-resistance parameter. Experimental results show that the devices experience die-attach damage and that the on-resistance captures the degradation process in such a way that it could be used for the development of prognostics algorithms (data-driven or physics-based).

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 2010
Accession Number
ADA562385

Entities

People

  • Abhinav Saxena
  • Jose R. Celaya
  • Kai Goebel
  • Philip Wysocki
  • Sankalita Saha

Organizations

  • National Aeronautics and Space Administration

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Algorithms
  • Electronics
  • Failure Mode And Effect Analysis
  • Field Effect Transistors
  • Heat Transfer
  • High Temperature
  • Intelligent Systems
  • Life Tests
  • Mechanics
  • Metal Oxide Semiconductors
  • Metal-Oxide-Semiconductor Field-Effect Transistors
  • Modules (Electronics)
  • Power Electronics
  • Resistance
  • Semiconductor Devices
  • Semiconductors
  • Transistors

Fields of Study

  • Engineering

Readers

  • Electrical Engineering
  • Marine Ecological Systems Migration
  • Structural Health Monitoring of Composite Structures.

Technology Areas

  • Microelectronics