Sensitive Infrared Photodetectors: Optimized Electron Kinetics for Room-Temperature Operation
Abstract
The research focused on design of room-temperature detectors based on advanced quantum dot (QD) nanostructures with optimized photoelectron kinetics. It has been demonstrated that potential barriers around QDs and/or QD clusters significantly increase the photoelectron lifetime and improve the device responsivity, photoconductive gain, and sensitivity. Combining QD nanoblocks with various positions of dopants it is possible to create unique distribution of potential profile, which forces photoelectrons to move in the designated areas and to avoid QDs. Changing the electron occupation of QDs one can manage the barriers and control the photoelectron motion. The proposed, designed, and investigated advanced QD structures have a set of characteristics making them especially suitable for IR: (i) Manageable kinetics, which allows for tuning the photocarrier lifetime to control basic sensor characteristics, such as operating time, responsivity, and detectivity; (ii) Tunable highly-selective coupling to radiation; (iii) High photoconductive gain and responsivity; (iv) Low generation-recombination noise due to the long photoelectron lifetime.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 20, 2010
- Accession Number
- ADA563729
Entities
People
- Andrei Sergeyev
- Vladimir Mitin