Electric Field Dependence of Quantum Efficiencies of Ag/n-Si Composites in the Infrared at Room Temperature
Abstract
Room temperature quantum efficiencies of 2 micron thick Ag/n-Si composite films as a function of electric field were calculated for incident wavelengths of 3, 5, 8 and 14 microns, representing the first time such a calculation was made for a metal-semiconductor composite. With energies less than the Ag-Si Schottky barrier height, the signal current is carried by electrons tunneling through the barrier, for composites with Ag nanoparticles 5nm in size in an applied electric field of 2x10e+6 V/cm, the quantum efficiencies are between 10% and 35% depending on the incident wavelength. They increase rapidly with electric field and asymptotically a large fraction of the radiation absorbed in the Ag particles
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 10, 2009
- Accession Number
- ADA563738
Entities
People
- Chichang Zhang
- Clayton W. Bates Jr.
Organizations
- Howard University