Diode Lasers and Light Emitting Diodes Operating at Room Temperature with Wavelengths Above 3 Micrometers

Abstract

New family of the GaSb-based type-I quantum well (QW) diode lasers and light emitting diodes (LED) were designed and fabricated. World record parameters were demonstrated for all devices. Diode laser operate in continuous wave (CW) regime at room temperature (RT) up to 3.4 ).lm. More than 350 mW ofCW power was demonstrated for 3 J.lm emitting multimode lasers. Single spatial mode 3-3.2 J.lm diode lasers were developed. LEDs operate at wavelength above 4 J.lm at RT. Dual color mid-infrared LEDs were designed and fabricated. Metamorphic diode lasers grown onto GaSb substrates using compositionally graded buffers were designed and fabricated.

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Document Details

Document Type
Technical Report
Publication Date
Nov 29, 2011
Accession Number
ADA563915

Entities

People

  • Dmitry Donetsky
  • Gregory Belensky
  • L. Shterengas
  • Sergey Suchalkin

Organizations

  • Stony Brook University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Continuous Waves
  • Diodes
  • Distributed Feedback Lasers
  • Electron Microscopy
  • Electronics
  • Electronics Laboratories
  • Jet Propulsion
  • Laser Diodes
  • Lasers
  • Light Emitting Diodes
  • Light Sources
  • Optical Properties
  • Optics
  • Quantum Wells
  • Semiconductor Diodes
  • Semiconductor Lasers
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Quantum Computing