Device Performance and Reliability Improvements of AlGaN/GaN/Si MOSFET Using Defect-Free Gate Recess and Laser Annealing
Abstract
This is the first annual report on in-situ studies conducted of atomic layer deposition (ALD) of Al2O3 on GaN and Al0.25Ga0.75N (AlGaN) substrates. For GaN substrates, it was found that O3 exposure at 400 degree C results in adequate functionalization of the GaN surface to enable subsequent ALD growth of Al2O3 in a much shorter incubation period relative to a HF-treated GaN surface, and the O3 exposure also results in detectable N-O bonding. In contrast to III-arsenide-based substrates, no detectable Ga-oxide reduction "clean-up" effect was observed for the GaN surface.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 18, 2012
- Accession Number
- ADA564724
Entities
People
- Robert M Wallace
Organizations
- University of Texas at Dallas