Random Networks of Carbon Nanotubes as an Electronic Material

Abstract

We report on the transport properties of random networks of single-wall carbon nanotubes fabricated into thin-film transistors. At low nanotube densities (~1 micrometer -2) the networks are electrically continuous and behave like a p-type semiconductor with a field-effect mobility of ~10 cm2/V s and a transistor on-to-off ratio ~10(5). At higher densities (~10 micrometer -2) the field-effect mobility can exceed 100 cm2/V s; however, in this case the network behaves like a narrow band gap semiconductor with a high off-state current. The fact that useful device properties are achieved without precision assembly of the nanotubes suggests the random carbon nanotube networks may be a viable material for thin-film transistor applications.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2003
Accession Number
ADA573665

Entities

People

  • Doewon Park
  • E. S. Snow
  • J. P. Novak
  • P. M. Campbell

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Carbon Nanotubes
  • Diameters
  • Electrical Resistance
  • Electronic Materials
  • Electronics Laboratories
  • Energy Bands
  • Field Effect Transistors
  • Films
  • Fullerenes
  • Geometry
  • Materials
  • Semiconductors
  • Thin Film Transistors
  • Thin Films
  • Transistors
  • Transport Properties

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.
  • Nanocomposite Materials Science

Technology Areas

  • Microelectronics