A W-Band InAs/AlSb Low-Noise/Low-Power Amplifier

Abstract

The first W-Band antimonide based compound semiconductor low-noise amplifier has been demonstrated. The compact 1.4-mm2 three-stage co-planar waveguide amplifier with 0.1- micrometer InAs/AlSb high electron mobility transistor devices is fabricated on a 100-micrometer GaAs substrate. Minimum noise-figure of 5.4 dB with an associated gain of 11.1 dB is demonstrated at a total chip dissipation of 1.8mW at 94 GHz. Biased for higher gain 16 +- 1 dB is measured over a 77-103 GHz frequency band.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 2005
Accession Number
ADA573976

Entities

People

  • Augusto Gutierrez
  • Brian R. Bennett
  • J. Brad Boos
  • Michael D. Lange
  • Roger Tsai
  • W.R. Deal

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Compound Semiconductors
  • Dissipation
  • Electron Mobility
  • Electrons
  • Frequency
  • Frequency Bands
  • High Electron Mobility Transistors
  • Low Noise
  • Low Noise Amplifiers
  • Mobility
  • Monolithic Microwave Integrated Circuits
  • Noise
  • Power Amplifiers
  • Semiconductors
  • Transmission Lines
  • W Band

Readers

  • Electronics Engineering
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics