Enhancing Hole Mobility in III-V Semiconductors

Abstract

Transistors based on III-V semiconductor materials have been used for a variety of analog and high frequency applications driven by the high electron mobilities in III-V materials. On the other hand, the hole mobility in III-V materials has always lagged compared to group-IV semiconductors such as germanium. In this paper, we explore the use of strain and heterostructure design guided by bandstructure modeling to enhance the hole mobility in III-V materials. Parameters such as strain, valence band offset, effective masses, and splitting between the light and heavy hole bands that are important for optimizing hole transport are measured quantitatively using various experimental techniques. A peak Hall mobility for the holes of 960 cm(expn 2)/Vs is demonstrated and the high hole mobility is maintained even at high sheet charge.

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Document Details

Document Type
Technical Report
Publication Date
May 21, 2012
Accession Number
ADA578086

Entities

People

  • Aneesh Nainani
  • Brian R. Bennett
  • Krishna C. Saraswat
  • Mario G. Ancona
  • Ronaldd D. Schrimpf

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Electron Mobility
  • Electrons
  • Energy Bands
  • Engineering
  • Field Effect Transistors
  • Frequency
  • High Electron Mobility Transistors
  • Low Temperature
  • Magnetic Fields
  • Materials
  • Mobility
  • Quantum Wells
  • Scattering
  • Semiconductors
  • Spectra
  • Transistors
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics