Systematic Study of p-type Doping and Related Defects in III-Nitrides: Pathway toward a Nitride HBT

Abstract

The group-III nitride materials system has been meticulously investigated since the late 1980s for its applications in electronic and optoelectronic devices. These materials have a direct bandgaps that are tunable from 0.7 eV (InN) to 6.2 eV (AlN) by forming alloys of the different III-nitride binaries. This bandgap range covers the entire visible spectrum, and some useful regions of ultraviolet and infrared light. In the case of light emission, this materials system boasts an enormous array of applications including indicators, lasers, solid state illumination, and water purification/sterilization among others. Group-III nitrides also have a very strong resistance to radiation damage, providing applications in space, as well.

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Document Details

Document Type
Technical Report
Publication Date
Nov 20, 2012
Accession Number
ADA582638

Entities

People

  • W. Alan Doolittle

Organizations

  • Georgia Tech

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Electrical Properties
  • Exclusion Principle
  • Fermi Levels
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Mass Spectrometry
  • Materials
  • Measurement
  • Optical Properties
  • Optoelectronic Devices
  • Power Electronics
  • Scattering
  • Semiconductors
  • Solar Cells
  • Spectra

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Directed Energy
  • Microelectronics
  • Space