Enhancement Mode Power Switching AlGaN HEMTs

Abstract

In this program we have demonstrated that AISiN is a preferred dielectric for high voltage AIGaN HEMTs for power switching applications. The grate-source capacitance will compare favorably over field-plated designs making the drive circuitry less challenging. We have achieved a 440 volt breakdown with a 40 GHz fmax which is clearly a state-of-the-art result. We have also developed a Mg vapor phase diffusion process which shows promise for obtaining stable threshold shift for enhancement mode operation. This program supported a single graduate student who is now employed at RFMD and engaged in the development of AIGaN HEMT transistors.

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Document Details

Document Type
Technical Report
Publication Date
May 14, 2013
Accession Number
ADA584741

Entities

People

  • James R. Shealy

Organizations

  • Cornell University College of Engineering

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Capacitance
  • Communication Systems
  • Diffusion
  • Fabrication
  • Frequency
  • High Temperature
  • High Voltage
  • Impedance
  • Materials
  • Measurement
  • Phase
  • Power Measurement
  • Standards
  • Switching
  • Vapor Phases
  • Voltage

Readers

  • STEM Education
  • Semiconductor Device Technology