Enhancement-Mode Metal-Oxide-Semiconductor Single-Electron Transistor on Pure Silicon

Abstract

The authors demonstrate a silicon-based single-electron transistor (SET) in the few-electron regime. Our structure is similar to a metal-oxide-semiconductor field-effect transistor. The substrate, however, is undoped and could be isotope enriched so that any nonuniformity and spin decoherence due to impurity and nuclear spins can be minimized. A bilayer-gated configuration provides flexibility in manipulating single electrons. The stability chart measured at 4.2 K shows diamondlike domains with a charging energy of 18 meV, indicating a quantum dot of 20 nm in diameter. The benefits of using this enhancement-mode SET in silicon and its potential application for scalable quantum computing are discussed.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2006
Accession Number
ADA593661

Entities

People

  • B. H. Hu
  • G. M. Jones
  • Gerard Hehein
  • Henry Yang
  • M. J. Yang
  • Russell Hajdaj

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Electron Beam Lithography
  • Electron Density
  • Electronics Laboratories
  • Electrons
  • Field Effect Transistors
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Nuclear Spins
  • Oxides
  • Quantum Computing
  • Quantum Dots
  • Quantum Information
  • Quantum Properties
  • Semiconductors
  • Spin-Orbit Interaction
  • Transistors
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Quantum Science - Quantum Dots