Metamorphic InAsSb/AlInAsSb Heterostructures for Optoelectronic Applications

Abstract

Metamorphic heterostructures containing bulk InAs(1-x)Sbx layers and AlInAsSb barriers were grown on GaSb substrates. The lattice mismatch (up to 2.1%) between the GaSb substrates and the InAsSb layers was accommodated by the growth of GaInSb linearly graded buffers. The 1 micrometers thick InAsSb(0.44) layer with an absorption edge above 9 micrometer exhibited an in-plane residual strain of about 0.08%. InAs(1-x)Sbx structures with x=0.2 and x=0.44 operated as light emitting diodes at 80K demonstrated output powers of 90 muW and 8 muW at 5 micrometer and 8 micrometer, respectively

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Document Details

Document Type
Technical Report
Publication Date
Mar 20, 2013
Accession Number
ADA596687

Entities

People

  • David Westerfeld
  • Ding Wang
  • Dmitry Donetsky
  • G. Kipshidze
  • Gregory Belenky
  • L. Shterengas
  • Stefan P. Svensson
  • Wendy L. Sarney
  • Youxi Lin

Organizations

  • State University of New York

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Absorption
  • Abstracts
  • Ceramic Materials
  • Crystal Lattices
  • Cubic Lattices
  • Detectors
  • Diffraction
  • Electroluminescence
  • Energy Bands
  • Indium Antimonides
  • Light Emitting Diodes
  • Military Research
  • Scattering
  • Semiconductors
  • Spectra
  • Substrates
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics