Effects of Epitaxial Lift-off on Interface Recombination and Laser Cooling in GaInP/GaAs Heterostructures

Abstract

Photoluminescence of GaAs passivated with GaInP is studied over the temperature range 7-450 K. Different photocarrier recombination mechanisms are identified as the temperature changes. An interface recombination velocity of less than 0.6 cm/s is measured at 300 K. Lift-off processing inhibits but does not preclude laser cooling of GaAs.

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Document Details

Document Type
Technical Report
Publication Date
Feb 15, 2005
Accession Number
ADA597325

Entities

People

  • Babak Imangholi
  • Mansoor Sheik-bahae
  • Michael P. Hasselbeck
  • Richard I. Epstein
  • Sarah Kurtz

Organizations

  • Los Alamos National Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Band Gaps
  • Barometric Pressure
  • Chemical Vapor Deposition
  • Cooling
  • Energy
  • Energy Bands
  • Heat Of Activation
  • Heterojunctions
  • High Temperature
  • Laser Cooling
  • Lasers
  • Luminescence
  • New Mexico
  • Photoluminescence
  • Renewable Energy
  • Semiconductors
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy