Polarization Induced Doping in p-ZnMgO

Abstract

The primary objective of the STIR project was to investigate the feasibility of realizing graded p-type MgZnO structures, suitable for device integration, using engineered Mg concentration grading. The project was successful in demonstrating a graded MgxZn1-xO epitaxial layer on sapphire, grown by plasma-assisted molecular beam epitaxy (MBE). To realize this accomplishment, MgZnO layers were optimized to allow for up to 46% Mg with no observable phase segregation and sub-nanometer roughness. A primary enabling element of this was the development of a high temperature ZnO buffer layer, resulting in high Mg concentration with low dislocations. A graded structure with Mg concentration from 0 to 43% Mg was grown and validated with SIMS depth profiling. This work indicates that with proper control over flux sources, a graded MgZnO layer is possible and suitable for polarization doping with the proper background carrier concentration control. Future work should focus on obtaining precise control of the Mg concentration through use of a flux monitor and the potential for using nitrogen to combat background n-type carriers in order to realize a high hole density channel.

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Document Details

Document Type
Technical Report
Publication Date
Sep 06, 2013
Accession Number
ADA602040

Entities

People

  • Winston V. Schoenfeld

Organizations

  • University of Central Florida

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Human Systems

DTIC Thesaurus Topics

  • Department Of Defense
  • Detection
  • Detectors
  • Energy Bands
  • Equations
  • High Temperature
  • Low Temperature
  • Mathematics
  • Metal-Semiconductor-Metal Photodetectors
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optics
  • Photodetectors
  • Roughness
  • Students
  • Surface Roughness
  • Technology Transfer

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology