Laterally-Biased Quantum IR Detectors

Abstract

This project was aimed to the development of a suitable fabrication system to produce laterally-biased quantum well detectors with low dark current at room temperature. The development of quantum IR detectors with low dark current and operating at room temperature was achieved. On the one hand, we were able to reduce the dark current by biasing the pinch-off gates/lateral contacts in reverse way. In addition, we were able to etched the quantum wells (QWs) to avoid direct conduction and only the photo generated carriers are expected to reach the lateral contacts. In this case, the growth of more than 2 QWs is possible, thus, the responsivity could be enhanced. It has been demonstrated that this technology is very promising for the development of single QWIP detectors working at high temperature.

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Document Details

Document Type
Technical Report
Publication Date
Oct 23, 2013
Accession Number
ADA602460

Entities

People

  • Alvaro De Guzman Fernandez

Organizations

  • Technical University of Madrid

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accuracy
  • Air Force Research Laboratories
  • Detection
  • Detectors
  • Electron Microscopy
  • Fabrication
  • Infrared Detectors
  • Ion Beams
  • Ion Implantation
  • Ions
  • Low Temperature
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Quantum Wells
  • Resistance
  • Scanning Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing