Imaging Gallium Nitride High Electron Mobility Transistors to Identify Point Defects

Abstract

The purpose of this thesis is to streamline the sample preparation procedure to maximize the yield of successful samples to be analyzed chemically in an energy dispersive spectrometry detector. The secondary objective of this work is to identify the specific chemical elements needed to ascertain trends in stressing nickel/gold and platinum/gold gated high electron mobility transistors (HEMT). We analyze unstressed devices near the hetero-epitaxial layers to ascertain any inconsistencies due to processing defects. Results show it is possible to identify areas of electrical stress-induced diffusion and point defect creation. Identification of these trends will assist in the improvement of gallium nitride HEMT fabrication processes leading to the development of more reliable devices.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2014
Accession Number
ADA608021

Entities

People

  • Ashley M. Wessel

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Carriers
  • Chemical Elements
  • Compound Semiconductors
  • Electron Microscopes
  • Electron Microscopy
  • Electron Mobility
  • Electronics Industry
  • Field Effect Transistors
  • Gallium Nitrides
  • High Electron Mobility Transistors
  • Microscopes
  • Microscopy
  • Point Defects
  • Power Electronics
  • Semiconductors
  • Solid State Electronics
  • Two Dimensional

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics