Pulse Evaluation of High Voltage SiC Diodes

Abstract

The U. S. Army Research Laboratory (ARL) is evaluating silicon carbide switches and diodes to determine the range of high power and pulsed power applications for which SiC is a sensible material to use. This study focused on 6 kV, SiC P-i-N diodes which were designed by Cree Inc. and packaged and pulse tested at ARL. Diodes were pulsed at a single shot rate both individually and in parallel. Individual diodes were pulsed as high as 5.9 kA (corresponding to an action of 4.5 x 10(3) A2s) for 25 single shots before failing, and as high as 5.0 kA (with an action of 3.5 x 10(3) A2s) for over 100 shots without failure. Five diodes paralleled in the pulse testbed carried a total current of 23 kA with each diode sharing 19-21% of the total peak current. Eight diodes in parallel reached over 39 kA peak current. The ultimate goal is to combine 8-10 diodes in a single, compact package for higher current applications.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2007
Accession Number
ADA609417

Entities

People

  • A. K. Agarwal
  • Brett A. Hull
  • H. O'brien
  • Stephen Bayne
  • W. Shaheen

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbides
  • Ceramic Materials
  • Compound Semiconductors
  • Electronics
  • Energy Bands
  • Failure Mode And Effect Analysis
  • High Voltage
  • Materials
  • Military Research
  • Packaging
  • Power
  • Pulsed Power
  • Silicon
  • Silicon Carbide
  • Test And Evaluation
  • Test Beds
  • Voltage

Readers

  • Electrical Engineering
  • Semiconductor Device Technology