Exploiting the Negative Polarization Properties of Indium Gallium Nitride (InGaN)/Gallium Nitride (GaN) Heterostructures to Achieve Frequency Doubled Blue-green Lasers with Deep UV (<250 nm) Emission (Year 2)
Abstract
There is an Army need to develop deep ultraviolet (UV) semiconductor lasers that are compact with a low power budget for use in real-time reagentless biodetection and identification systems as well as water monitoring. Our approach is to develop a visible indium gallium nitride (InGaN)-based laser that exploits the negative polarization charge at the heterointerface, which can then be frequency doubled into the deep UV. In the second year of this Director s Research Initiative (DRI), we focused on the growth and development of periodically poled AlGaN to be used for frequency doubling the visible laser light into the deep UV (DUV). To accomplish this, we have demonstrated the successful growth of inverted, N-polar AlN, which was achieved by Mg overdoping using a larger inversion layer thickness than for N-polar GaN. We have demonstrated a sub-micron periodic poled AlN by e-beam lithography, ICP etching, and MBE regrowth.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 2011
- Accession Number
- ADA619066
Entities
People
- Eric D. Readinger
- Meredith Reed
Organizations
- United States Army Research Laboratory