Raman Scattering from Tin

Abstract

We are investigating the use of Raman spectroscopy of tin as an analytical tool for discerning specific allotropic differences in ultra-thin tin films, and discerning differences between the tin and the growth substrates of interest. We have acquired spectra from barium difluoride (BaF2), crystalline silicon dioxide (SiO2), as well as ultra-thin tin semiconductor and tin metallic allotropes, and we are developing a fundamental understanding of the spectra. The research has identified that BaF2 is an excellent passivation layer for two-dimensional tin (stanene) that will enhance the resolution of the Raman spectrum of future tin layers and facilitate the molecular beam epitaxy (MBE) growth of stanene.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 2015
Accession Number
ADA621303

Entities

People

  • Barbara Nichols
  • Charles Rong
  • Harry Hier
  • Mikella Farrell
  • Patrick A. Folkes
  • Patrick Taylor

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Dioxides
  • Elements
  • Epitaxial Growth
  • Indium Antimonides
  • Information Operations
  • Military Research
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Raman Scattering
  • Raman Spectra
  • Raman Spectroscopy
  • Scattering
  • Silicon Dioxide
  • Spectra
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene