Heterogenous Material Integration and Band Engineering With Type II Superlattice
Abstract
InAs/GaSb type-II strained layer superlattice (T2SL) detectors are of great importance for a variety of military and civil applications requiring increased resolution, reliability, and operating temperature, as well as lowered size, weight, power and cost. However, despite extensive efforts on T2SL material growth, detector passivation, and fabrication, T2SL detectors still have not reached the performance level of the Rule 07 for MCT detectors. During this program, the Center for High Technology Materials at the University of New Mexico was investigating high performance heterojunction bandgap engineered infrared focal plane arrays using InAs/GaSb/AlSb strained layer superlattices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 26, 2015
- Accession Number
- ADA623660
Entities
People
- Sanjay Krishna
Organizations
- University of New Mexico